Spin-On glass Copper Doped SOG Diffusion IC transistor Diode MEMS semiconductor

Description: One 8 ounce bottle of Cu-345; Copper doped spin-on glass suitable for manufacturing diodes, transistors, solar cells, MEMS, and Integrated circuits. Lifetime control. Comes with Application Guide, MSDS; in DOT exempt (for flammables) packaging. Note: bottle photo is representative of spin on glass products only but not necessarily the dopant product being purchased. Licensing available for low cost (pennies/wafer) internal SOG manufacturing. Spin-On Materials Dopants & Glasses Customized Spin-On Dopants and Glasses for VLSI, ULSI and Discrete Device Applications. Spin-On Dopants Offer a Variety of Applications for Device Manufacturing Spin-On dopants are primarily used to alter the electrical characteristics of semiconductor materials. These semiconductor materials become either "N" (negative) type conducting or "P" (positive) type conducting. Spin-On Materials Deliver High Reliability at Low Cost If you are unfamiliar with the Spin-On glass process, you will discover that it is unsurpassed for high purity at low cost. The Spin-On glass process begins by placing a silicon wafer on a vacuum chuck spinner. Solution is applied to the wafer and the wafer is spun at approximately 4,000 RPM. The result is a uniform layer of glass formed over the wafer. At present, research is currently be conducted using doped glass and ion implantation to harden materials by knocking the dopants out of the lattice and into the substrate material. Progress is being made in the area of superconductor precursor materials (doped glasses or polymers containing such elements as yttrium, barium, copper, strontium and lanthanum). These materials are used to create high temperature superconductor materials. Phosphorous doped glasses can be utilized as a passivation layer over finished devices or even in non-semiconductor work, such as jewelry and glass fabrication. Desert Silicon manufactures the following spin-on diffusion materials for a wide range of uses in semiconductor fabrication: Aluminum doped glass for deep-P diffusions and ceramic DIP packaging. (Wafer Absorption) Antimony doped glass for buried layer and MOS applications Arsenic doped glass for resistor, buried layer and MOS applications Boron doped glass for base, resistor and isolation diffusions. Gallium doped glass for P-type diffusion Gold doped glass for minority carrier lifetime control Non-doped glass as interlayer dielectric, planarization, barrier and passivation layers Phosphorous doped glass for NPN base, resistor/base, barrier and passivation layers, emitters and solar cells Platinum doped glass for minority carrier lifetime control Tantalum doped polymer for solar anti-reflective (A.R.) coating and high dielectric applications Titanium doped polymer for solar A.R. coating and high dielectric applications Titanium Tantalum compound polymer for solar A.R. coating and high dielectric applications Zinc doped glass for LED and GaAs applications Zinc Arsenic compound spin-on glass for LED and GaAs applications Other dopants are available and new materials are under development, including many at or beyond the state of the art. If you need a dopant not shown above, call us. It may be near availability or already formulated. Physical Properties: The Viscosity.s of Desert Silicon SOM products are approximately 0.8 . 2.1 cp. The densities are approximately 0.9 . 1.1 g/cu cm. The solutions are passed through a 0.1 micron filter during processing making them suitable for ULSI applications. Chemical analysis for Na, K, Cu and Fe assure that impurities are maintained below 0.1 PPM. The solutions may be stored at room temperature. Shelf life ranges from ninety days to one year, depending on the dopant and concentration. Desert Silicon Delivers A Combination of Services Unmatched in the Industry Incoming materials are qualified by atomic absorption and then further distilled to improve purity. Sodium, potassium, copper and iron must be below 0.1 PPM. By starting with purer materials you end up with a purer product. Desert Silicon ensures that its formulation meets or exceeds the specification norm for the industry. As a result, devices suffer far less damage after diffusion. Desert Silicon can provide a 0.1 micron particle filtration for ULSI and VLSI devices. In addition, Spin-On films produced by Desert Silicon have extremely low levels of carbon and chlorine. Chlorine causes corrosion. Carbon disables a device.s electrical characteristics. These problems are nullified at Desert Silicon. Desert Silicon also provides customized materials to suit any process requirement. You never have to adapt your process to a standard product on the shelf. Spin-On Material (SOM) from Desert Silicon Technical Data Features and Benefits of Spin-On Dopants from Desert Silicon Low temperature process Reduced device damage Ease of application Cost effective Eliminates the need for sophisticated, costly equipment Repeatability from week to week and batch to batch Consistent step coverage and planarization capability Superior dielectric properties for intermetal applications Simple to apply Thickness. customized to your specific applications 0.1 micron filtration for ULSI and VLSI device fabrications Quick delivery Unsurpassed quality over film thickness, batch uniformity, coverage consistency and low particulate contamination Compatibility with PECVD process High purity for less than 0.1 PPM ionic contaminates, such as sodium, potassium, copper and iron Phosphorous or undoped glasses Spin-On Dopants Speed and Simplify Production Spin-on dopants can be applied at room temperature without the need of costly, sophisticated equipment. Rapid Thermal Diffusion (RTD) prevents lateral diffusion and can be used with dense devices. In addition, damage during diffusion is significantly reduced using spin-on dopants. Crystal damage from Ion Implantation is eliminated making SOM suitable for tomorrows devices today. Using spin-on dopants with 3-5 or 2-6 materials allows the use of open tube diffusion. This type of diffusion reduces production costs when compared to the sealed ampoule process using other materials. Spin-On materials have the additional capability to employ rapid thermal diffusion. This is a definite advantage when working with highly dense devices. It is also possible to mix spin-on dopants to form compound spin-ons. Compound spin-on dopants can compensate for any inherent weaknesses in individual materials and create combinations that cannot be made through other methods. Mixing spin-on dopants to form compound spin-ons allows new types of circuits to be built. Plus, compound spin-ons make it possible for simultaneous diffusion. Simultaneous diffusion avoids completing two, separate diffusion steps. Currently in research and development are superconductor precursor materials which have the potential to be self-passivated. Self-passivation is accomplished by using polymer or glass as the passivation matrix material. Semiconductor Dopants, Polymers and Glass Aluminum-Doped Glass Boron-Doped Glass Neodymium-Doped Glass Tantalum-Doped Glass Zinc-Doped Glass Zinc/Phosphorous-Doped Glass Titanium/Tantalum-Doped Polymer Antimony-Doped Glass Gold-Doped Glass Phosphorous-Doped Glass Titanium-Doped Polymer Zinc/Arsenic-Doped Glass Gallium-Doped Glass Arsenic-Doped Glass Indium-Doped Glass Platinum-Doped Glass BPSG Superconductor Materials Yttrium-Doped Glass Lanthanum-Doped Glass Yttrium/Barium/Copper Oxide Polymer Barium-Doped Glass Strontium-Doped Glass Copper-Doped Glass Yttrium/Barium-Doped Glass Dielectric and Planarization Desert Silicon offers a variety of thickneses for undoped or phosphorous-doped glasses that can be used in intermetal dielectric and planarization applications. QC Testing With Today.s Most Sophisticated Instruments Desert Silicon employs a variety of sophisticated instruments to thoroughly test glasses before shipment to ensure that thickness is uniform from batch to batch. High Technology Industries Have Found Numerous Applications For Spin-On Materials Passivation: Spin-On glasses serve as a protective layer after the circuitry and metal work is completed. Intermetal Dielectric: Spin-On glasses are an efficient intermetal dielectric for circuits that have two or more levels of metal running in different directions across the wafer. Because Spin-On glass is a low temperature process, it is ideal for aluminum and copper applications. Planarization: Dense circuits usually contain steep oxide steps. By using Spin-On glass prior to metalization, you can achieve a planarizing effect (more filling in the lower portion and less filling of the top portion). As a result any steps that exists will be smoothed over so that metal going over that step will not break. Product Groups NDG-2000 . undoped 2,000 angstroms thick glass NDG-5000 . undoped 5,000 angstroms thick glass NDG-7000 . undoped 7,000 angstroms thick glass P-240 . phosphorous 2,000 angstroms thick glass NOS-2000 . undoped 2,000 angstroms thick Siloxane polymer Spin-On Material Provides High Performance Across the Board The following features and benefits outline how Spin-On glass enhances production efficiency and product performance. Because Spin-On glass is a low temperature process, it gives manufacturers greater flexibility, especially when there is metal on the wafer. Spin-On glass is compatible with plasma deposited films. Together, these two materials provide engineering solutions for planarization, step-coverage and intermetal dielectric applications. The viscosity of Spin-On glass is approximately 1 centipoise (Similar to alcohol). Spin-On glass is typically dried in an oven to drive off solvents after the spinning operation. The refractive index of Spin-On glass is approximately 1.45. When densified at temperatures of 350ºC . 450ºC it becomes as dense as CVD or plasma-enhanced CVD oxide and at 800º - 1000ºC it becomes as dense as thermal oxide. If you have any questions, please contact us. Payment by Pay Pal or Credit Card. NOTE: Arizona Residents are responsible for sales tax, unless, you send proof of resale certificate. Shipping price of $325 includes $85 for DOT Exempt (for flammables) packaging and $240 for Federal Express Hazardous next day air shipment. Buyer releases Desert Silicon, Inc from any liabilities from use of this product. All liabilities will be the responsibility of the buyer. Merchandise must be paid for within 3 days. USES “All compounds are for laboratory use only and not for drug, human consumption, household or other uses.” You must be a least (21) to order and possess the knowledge regarding toxicity, health hazards, and all regulations required to store, use and dispose of this compound. No warranties are expressed or implied for any reason by the seller. The purchaser agrees to hold harmless the seller in any event, whether accident or injury, regarding the use or misuse of this compound. By ordering, you are agreeing to this notice to the disclaimer and uses and certify that you the buyer are also the end user. DISCLAIMER The information above is believed to be accurate and represents the best information currently available to us. However, we make no warranty of merchantability or any other warranty, express or implied, with respect to such information, and we assume no liability resulting from its use. Users should make their own investigations to determine the suitability of the information for their particular purposes. In no event shall Desert Silicon, Inc. be liable for any claims, losses, or damages of any third party or for lost profits or any special, indirect, incidental, consequential or exemplary damages, howsoever arising, even if Desert Silicon, Inc. has been advised of the possibility of such damages. A few hazardous materials may lawfully be transported under certain conditions if they are properly packaged and labeled. Such items may be listed on eBay, provided that the listing contains a clear notice of the hazardous nature of the material, and a description of the planned method of shipping that complies with the law.

Price: 1200 USD

Location: Glendale, Arizona

End Time: 2025-01-19T02:18:09.000Z

Shipping Cost: 385 USD